10AX066H3F34E2SG 100% New & Original Isolation Amplifier 1 Circuit Differential 8-SOP

short description:

Tamper protection—comprehensive design protection to protect your valuable IP investments

Enhanced 256-bit advanced encryption standard (AES) design security with authentication

Configuration via protocol (CvP) using PCIe Gen1, Gen2, or Gen3

Dynamic reconfiguration of the transceivers and PLLs

Fine-grained partial reconfiguration of the core fabric

Active Serial x4 Interface

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Product Detail

Product Tags

Product Attributes

EU RoHS	Compliant
ECCN (US)	3A001.a.7.b
Part Status	Active
HTS	8542.39.00.01
Automotive	No
PPAP	No
Family Name	Arria® 10 GX
Process Technology	20nm
User I/Os	492
Number of Registers	1002160
Operating Supply Voltage (V)	0.9
Logic Elements	660000
Number of Multipliers	3356 (18x19)
Program Memory Type	SRAM
Embedded Memory (Kbit)	42660
Total Number of Block RAM	2133
Device Logic Units	660000
Device Number of DLLs/PLLs	16
Transceiver Channels	24
Transceiver Speed (Gbps)	17.4
Dedicated DSP	1678
PCIe	2
Programmability	Yes
Reprogrammability Support	Yes
Copy Protection	Yes
In-System Programmability	Yes
Speed Grade	3
Single-Ended I/O Standards	LVTTL\|LVCMOS
External Memory Interface	DDR3 SDRAM\|DDR4\|LPDDR3\|RLDRAM II\|RLDRAM III\|QDRII+SRAM
Minimum Operating Supply Voltage (V)	0.87
Maximum Operating Supply Voltage (V)	0.93
I/O Voltage (V)	1.2\|1.25\|1.35\|1.5\|1.8\|2.5\|3
Minimum Operating Temperature (°C)	0
Maximum Operating Temperature (°C)	100
Supplier Temperature Grade	Extended
Tradename	Arria
Mounting	Surface Mount
Package Height	2.63
Package Width	35
Package Length	35
PCB changed	1152
Standard Package Name	BGA
Supplier Package	FC-FBGA
Pin Count	1152
Lead Shape	Ball

Integrated Circuit Type

Compared with electrons, photons have no static mass, weak interaction, strong anti-interference ability, and are more suitable for information transmission. Optical interconnection is expected to become the core technology to break through the power consumption wall, storage wall and communication wall. Illuminant, coupler, modulator, waveguide devices are integrated into the high density optical features such as photoelectric integrated micro system, can realize quality, volume, power consumption of high density photoelectric integration, photoelectric integration platform including III - V compound semiconductor monolithic integrated (INP) passive integration platform, silicate or glass (planar optical waveguide, PLC) platform and silicon-based platform.

InP platform is mainly used for the production of laser, modulator, detector and other active devices, low technology level, high substrate cost; Using PLC platform to produce passive components, low loss, large volume; The biggest problem with both platforms is that the materials are not compatible with silicon-based electronics. The most prominent advantage of silicon-based photonic integration is that the process is compatible with CMOS process and the production cost is low, so it is considered to be the most potential optoelectronic and even all-optical integration scheme

There are two integration methods for silicon-based photonic devices and CMOS circuits.

The advantage of the former is that the photonic devices and electronic devices can be optimized separately, but the subsequent packaging is difficult and commercial applications are limited. The latter is difficult to design and process integration of the two devices. At present, hybrid assembly based on nuclear particle integration is the best choice

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Core clock networks