New Original Integrated Circuit BSP772T IP5306 BSZ040N06LS5 TLE7270-2D IC Chip
BSZ040N06LS5
Infineon’s OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices’ low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
Summary of Features
Low R DS(on) in small package
Low gate charge
Lower output charge
Logic level compatibility
Benefits
Higher power density designs
Higher switching frequency
Reduced parts count wherever 5V supplies are available
Driven directly from microcontrollers (slow switching)
System cost reduction
Parametrics
| Parametrics | BSZ040N06LS5 |
| Budgetary Price €/1k | 0.56 |
| Ciss | 2400 pF |
| Coss | 500 pF |
| ID (@25°C) max | 101 A |
| IDpuls max | 404 A |
| Mounting | SMD |
| Operating Temperature min max | -55 °C 150 °C |
| Ptot max | 69 W |
| Package | PQFN 3.3 x 3.3 |
| Pin Count | 8 Pins |
| Polarity | N |
| QG (typ @4.5V) | 18 nC |
| Qgd | 5.3 nC |
| RDS (on) (@4.5V LL) max | 5.6 mΩ |
| RDS (on) (@4.5V) max | 5.6 mΩ |
| RDS (on) (@10V) max | 4 mΩ |
| Rth max | 1.8 K/W |
| RthJA max | 62 K/W |
| RthJC max | 1.8 K/W |
| VDS max | 60 V |
| VGS(th) min max | 1.7 V 1.1 V 2.3 V |
