IPD042P03L3G BTS5215LAUMA1 IC Chip New Electronic Component

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Product Detail

Product Tags

IPD042P03L3 G
P-channel enhancement mode Field-Effect Transistor (FET), -30 V, D-PAK
Infineon’s highly innovative Opti MOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Summary of Features
Enhancement mode
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Pb-free lead-plating
RoHS compliant, Halogen-free
Qualified according to AEC Q101
Potential Applications
Power Management Functions
Motor control
On-board charger
Logic level translators
Power MOSFET gate drivers
Other switching applications


Product Attribute Attribute Value
Manufacturer: Infineon
Product Category: MOSFET
RoHS:  Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 70 A
Rds On – Drain-Source Resistance: 3.5 mOhms
Vgs – Gate-Source Voltage: - 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 175 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 150 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 22 ns
Forward Transconductance – Min: 65 S
Height: 2.3 mm
Length: 6.5 mm
Product Type: MOSFET
Rise Time: 167 ns
Series: OptiMOS P3
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 89 ns
Typical Turn-On Delay Time: 21 ns
Width: 6.22 mm
Part # Aliases: IPD42P3L3GXT SP000473922 IPD042P03L3GBTMA1
Unit Weight: 0.011640 oz


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