Merrill chip New & Original in stock electronic components integrated circuit IC IRFB4110PBF
Product Attributes
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current – Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9620 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRFB4110 |
Documents & Media
| RESOURCE TYPE | LINK |
| Datasheets | IRFB4110PbF |
| Other Related Documents | IR Part Numbering System |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Featured Product | Robotics and Automated Guided Vehicles (AGV) |
| HTML Datasheet | IRFB4110PbF |
| EDA Models | IRFB4110PBF by SnapEDA |
| Simulation Models | IRFB4110PBF Saber Model |
Environmental & Export Classifications
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
Additional Resources
| ATTRIBUTE | DESCRIPTION |
| Other Names | 64-0076PBF-ND
64-0076PBF SP001570598 |
| Standard Package | 50 |
The Strong IRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Summary of Features
Industry standard through-hole power package
High-current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
Benefits
Standard pinout allows for drop in replacement
High-current carrying capability package
Industry standard qualification level
High performance in low frequency applications
Increased power density
Provides designers flexibility in selecting the most optimal device for their application
Para-metrics
| Parametrics | IRFB4110 |
| Budgetary Price €/1k | 1.99 |
| ID (@25°C) max | 180 A |
| Mounting | THT |
| Operating Temperature min max | -55 °C 175 °C |
| Ptot max | 370 W |
| Package | TO-220 |
| Polarity | N |
| QG (typ @10V) | 150 nC |
| Qgd | 43 nC |
| RDS (on) (@10V) max | 4.5 mΩ |
| RthJC max | 0.4 K/W |
| Tj max | 175 °C |
| VDS max | 100 V |
| VGS(th) min max | 3 V 2 V 4 V |
| VGS max | 20 V |
Discrete Semiconductor Products
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
