IPD042P03L3G BTS5215LAUMA1 IC Chip New Electronic Component

short description:

Product Detail

Product Tags

IPD042P03L3 G
P-channel enhancement mode Field-Effect Transistor (FET), -30 V, D-PAK
Infineon’s highly innovative Opti MOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Summary of Features
Enhancement mode
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Pb-free lead-plating
RoHS compliant, Halogen-free
Qualified according to AEC Q101
Potential Applications
Power Management Functions
Motor control
On-board charger
DC-DC
Consumer
Logic level translators
Power MOSFET gate drivers
Other switching applications

Specifications

Product Attribute	Attribute Value
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TO-252-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds – Drain-Source Breakdown Voltage:	30 V
Id – Continuous Drain Current:	70 A
Rds On – Drain-Source Resistance:	3.5 mOhms
Vgs – Gate-Source Voltage:	- 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:	2 V
Qg – Gate Charge:	175 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd – Power Dissipation:	150 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	22 ns
Forward Transconductance – Min:	65 S
Height:	2.3 mm
Length:	6.5 mm
Product Type:	MOSFET
Rise Time:	167 ns
Series:	OptiMOS P3
Factory Pack Quantity:	2500
Subcategory:	MOSFETs
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	89 ns
Typical Turn-On Delay Time:	21 ns
Width:	6.22 mm
Part # Aliases:	IPD42P3L3GXT SP000473922 IPD042P03L3GBTMA1
Unit Weight:	0.011640 oz