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IPD031N06L3G new original Electronic Components ic chip MCU BOM service in stock IPD031N06L3G

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Product Detail

Product Tags

Product Attributes

TYPE DESCRIPTION
Category Discrete Semiconductor Products

Transistors – FETs, MOSFETs – Single

Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)

Cut Tape (CT)

Digi-Reel®

Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current – Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 30 V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD031

Documents & Media

RESOURCE TYPE LINK
Datasheets IPD031N06L3 G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
HTML Datasheet IPD031N06L3 G
Simulation Models MOSFET OptiMOS™ 60V N-Channel Spice Model

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

Additional Resources

ATTRIBUTE DESCRIPTION
Other Names IPD031N06L3G

IPD031N06L3 GTR-ND

IPD031N06L3 GDKR

IPD031N06L3 G-ND

IPD031N06L3GATMA1TR

IPD031N06L3 GCT-ND

IPD031N06L3 G

IPD031N06L3GATMA1DKR

IPD031N06L3GATMA1CT

SP000451076

IPD031N06L3 GCT

IPD031N06L3 GDKR-ND

Standard Package 2,500

A transistor is a semiconductor device that is commonly used in amplifiers or electronically controlled switches. Transistors are the basic building blocks that regulate the operation of computers, mobile phones, and all other modern electronic circuits.

Due to their fast response speed and high accuracy, transistors can be used for a wide variety of digital and analog functions, including amplification, switching, voltage regulator, signal modulation and oscillator. Transistors can be packaged individually or in a very small area that can hold 100 million or more transistors as part of an integrated circuit.

Compared with the electron tube, the transistor has many advantages:

1.Component has no consumption

No matter how good the tube is, it will gradually deteriorate due to changes in cathode atoms and chronic air leakage. For technical reasons, transistors had the same problem when they were first made. With advances in materials and improvements in many aspects, transistors typically last 100 to 1,000 times longer than electronic tubes.

2.Consume very little power

It is only one tenth or tens of one of the electron tube. It does not need to heat the filament to produce free electrons like the electron tube. A transistor radio only needs a few dry batteries to listen for six months a year, which is difficult to do for tube radio.

3.No need to preheat

Work as soon as you turn it on. For example, a transistor radio goes off as soon as it is turned on, and a transistor television sets up a picture as soon as it is turned on. Vacuum tube equipment can’t do that. After the boot, wait for a while to hear the sound, see the picture. Clearly, in military, measurement, recording, etc., transistors are very advantageous.

4.Strong and reliable

100 times more reliable than the electron tube, shock resistance, vibration resistance, which is incomparable to the electron tube. In addition, the size of the transistor is only one-tenth to one-hundredth of the size of the electron tube, very little heat release, can be used to design small, complex, reliable circuits. Although the manufacturing process of transistor is precise, the process is simple, which is conducive to improving the installation density of components.


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