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AQX IRF7416TRPBF New and original integrated Circuit ic chip IRF7416TRPBF

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Product Detail

Product Tags

Product Attributes

TYPE DESCRIPTION
Category Discrete Semiconductor Products

Transistors – FETs, MOSFETs – Single

Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel (TR)

Cut Tape (CT)

Digi-Reel®

Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current – Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154″, 3.90mm Width)
Base Product Number IRF7416

Documents & Media

RESOURCE TYPE LINK
Datasheets IRF7416PbF
Other Related Documents IR Part Numbering System
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)

Discrete Power MOSFETs 40V and Below

Featured Product Data Processing Systems
HTML Datasheet IRF7416PbF
EDA Models IRF7416TRPBF by Ultra Librarian
Simulation Models IRF7416PBF Saber Model

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

Additional Resources

ATTRIBUTE DESCRIPTION
Other Names IRF7416TRPBFDKR

SP001554262

IRF7416TRPBFCT

IRF7416TRPBF-ND

IRF7416TRPBFTR

Standard Package 4,000

IRF7416

Benefits
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100KHz
Industry standard surface-mount power package
Capable of being wave-soldered
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Benefits
RoHS Compliant
Low RDS (on)
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
175°C Operating Temperature
P-Channel MOSFET

Transistor

A transistor is a semiconductor device used to amplify or switch electrical signals and power. The transistor is one of the basic building blocks of modern electronics.[1] It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor’s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits.

Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually construct a working device at that time.[2] The first working device to be built was a point-contact transistor invented in 1947 by American physicists John Bardeen and Walter Brattain while working under William Shockley at Bell Labs. The three shared the 1956 Nobel Prize in Physics for their achievement.[3] The most widely used type of transistor is the metal–oxide–semiconductor field-effect transistor (MOSFET), which was invented by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959.[4][5][6] Transistors revolutionized the field of electronics, and paved the way for smaller and cheaper radioscalculators, and computers, among other things.

Most transistors are made from very pure silicon, and some from germanium, but certain other semiconductor materials are sometimes used. A transistor may have only one kind of charge carrier, in a field-effect transistor, or may have two kinds of charge carriers in bipolar junction transistor devices. Compared with the vacuum tube, transistors are generally smaller and require less power to operate. Certain vacuum tubes have advantages over transistors at very high operating frequencies or high operating voltages. Many types of transistors are made to standardized specifications by multiple manufacturers.


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